t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 1 of 7 2n 6 804 available on commercial versions p - channel mosfet qualified per mil - prf - 19500/ 5 6 2 qualified levels : jan, jantx , and jantxv description this 2n 6 804 switching transistor is mili tary qualified up to the jan txv level for high - reliability applications . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packa ges. to - 204 a a ( to - 3 ) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 6 804 number series. ? jan, jantx, and jantxv qualifications are a vailable per mil - prf - 19500/ 5 6 2 . (see part nomenclature for all available options.) ? rohs compliant version available (commercial grade only). applications / benefits ? l ow - profile metal can design. ? military and other high - reliability applications. maximum ratings @ t a = +25 oc unless otherwise stated msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 -800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 1.67 o c/w total power dissipation @ t a = +2 5 c @ t c = + 25 c (1) p t 4 75 w drain - source voltage, dc v ds - 100 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc ( 2 ) i d 1 - 11.0 a drain current, dc @ t c = +100 oc ( 2 ) i d 2 - 7.0 a off - state current (peak total value) ( 3 ) i dm - 50 ? source current i s -11 a notes: 1. derated linearly by 0.6 w/oc for t c > +25 oc . 2. the following formula derives the maximum theoretical i d limit. i d is limited by package and internal wires and may be limited by pin diameter: 3. i dm = 4 x i d1 as calculated in note 2.
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 2 of 7 2n 6 804 mechanical and packaging ? case: to - 3 metal can. ? terminals: solder dipped (sn63/pb37) over nickel plated a lloy 52. rohs compliant matte- tin plating is also available. ? marking: manufacturer?s id, part number, date code, esd symbol. ? weight: approximately 12.7 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n 6 804 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commerci al jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition d i/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 3 of 7 2n 6 804 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = - 1.0 ma v (br)dss - 100 v gate - source voltage (threshold) v ds v gs , i d = - 0.25 ma v ds v gs , i d = - 0.25 ma, t j = +125 c v ds v gs , i d = - 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 - 2.0 - 1.0 - 4.0 - 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = - 80 v i dss1 - 25 a drain current v gs = 0 v, v ds = - 80 v, t j = +125 c i dss 2 0.25 ma static drain - source on - state resistance v gs = - 10 v, i d = - 7 a pulsed r ds(on)1 0.30 ? static drain - source on - state resistance v gs = - 10 v, i d = - 11 a pulsed r ds(on)2 0.36 ? static drain - source on - state resistance t j = +125c v gs = - 10 v, i d = - 7 a pulsed r ds(on)3 0.55 ? diode forward voltage v gs = 0 v, i s = - 11 .0 a pulsed v sd - 4.7 v dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = - 10 v, i d = - 11 a, v ds = - 50 v q g(on) 29.0 nc gate to source charge v gs = - 10 v, i d = - 11 a, v ds = - 50 v q gs 7.1 nc gate to drain charge v gs = - 10 v, i d = - 11 a, v ds = - 50 v q gd 21.0 nc
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 4 of 7 2n 6 804 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = - 11 a, v gs = - 10 v, r g = 7.5 ? , v dd = - 35 v t d(on) 60 ns rinse time i d = - 11 a, v gs = - 10 v, r g = 7.5 ? , v dd = - 35 v t r 140 ns turn - off delay time i d = - 11 a, v gs = - 10 v, r g = 7.5 ? , v dd = - 35 v t d(off) 140 ns fall time i d = - 11 a, v gs = - 10 v, r g = 7.5 ? , v dd = - 35 v t f 140 ns diode reverse recovery time di/dt 100 a/s, v dd - 5 0 v, i f = - 11 a t rr 250 ns
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 5 of 7 2n 6 804 graphs t 1 , rectangle pulse duration (sec onds ) figure 1 transient thermal impedance t c , c ase t emperature (c) figu re 2 maximum drain current vs case temperature thermal response (z ? jc ) i d drain current ( a mperes )
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 6 of 7 2n 6 804 graphs (continued) v ds , drain - to - source voltage (volts) figure 3 safe operating area i d drain current (amperes)
t4 - lds -0113 , rev . 3 (12 1514 ) ?201 2 microsemi corporation page 7 of 7 2n 6 804 package dimensions note: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. these dimensions should be measured at points .050 inch (1.27 mm) and . 055 inch (1.40 mm) below seating plane. when gauge is not used measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. mounting holes shall be deburred on the seating plane side. 6. drain is electrically connected to the case. 7. in accord ance with asme y14.5m, diameters are equivalent to x symbology . schematic dim inches millimeters notes min max min max a - .875 - 22.23 b .060 .135 1.52 3.43 c .250 . 36 0 6.35 9.1 5 3 d .312 .500 7.92 12.70 d 2 - .050 - 1.27 e .038 .043 0.97 1.10 dia. f .131 .188 3.33 4.78 r adius g 1.177 1.197 29.90 30.40 h .655 .675 16.64 17.15 j .205 .225 5.21 5.72 3 k .420 .440 10.67 11.18 3 l .495 .525 12.57 13.34 r adius m .151 .161 3.84 4.09 dia .
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